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p-type silicon中文是什么意思

  • p型矽

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  • 例句與用法
  • P - type silicon crystal plates have been adopted in the text , which are formed mask sio2 by heat - oxygenation . and figures are diverted by normal light etching technology
    本文采用p型單晶硅片,由熱氧化形成sio _ 2掩膜層,標(biāo)準(zhǔn)光刻工藝進(jìn)行圖形轉(zhuǎn)移,用koh溶液濕法刻蝕制作倒四棱錐腐蝕坑列陣。
  • 1 successively depositing cbn thin films on si substrates which reaches international advanced level , the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity , and the working gas was the mixture of nitrogen and argon
    研究了襯底負(fù)偏壓和射頻功率對(duì)制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si ( 100 ) ( 8 15 cm )襯底上,靶材為h - bn靶(純度達(dá)99 . 99 ) ,濺射氣體為氬氣和氮?dú)饣旌隙?,制樣過程中,襯底加直流負(fù)偏壓。
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